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silicon carbide substrate
the core of next-generation power semiconductors
Thin reduction of silicon carbide substrate
Thinning of silicon carbide substrates
The core of next-generation power semiconductors
Silicon carbide is an ideal substrate material for manufacturing high-temperature, high-frequency, and high-voltage power devices—such as the main inverters for electric vehicles, fast charging stations, and converters for rail transit systems. It boasts extremely high hardness, making it exceedingly difficult to machine.
Why is substrate thinning a technological bottleneck?
Unlocking Material Potential: Silicon carbide substrates initially have a relatively large thickness; thinning them is an essential approach to reducing device on-state resistance and minimizing switching losses.
Tackling the “hard and brittle” challenge: Silicon carbide ranks second only to diamond in hardness yet exhibits high brittleness. Traditional grinding wheels easily cause chipping and cracking of the material, resulting in extremely low yield rates.
Cost-effectiveness is key: Highly efficient silicon carbide thinning grinding wheels are crucial for reducing the overall cost of silicon carbide devices and promoting their large-scale application.
Incorporated in Hong Kong with Limited Liability
Hangzhou Xin Yan Ke’s technological advantages
From silicon to silicon carbide, from wafers to substrates, we leverage cutting-edge technology to inject outstanding competitiveness into your thinning processes.
01
Specifically designed for extreme hardness
We employ high-purity, high-strength diamond abrasives and a special bond system to ensure that the grinding wheels exhibit exceptionally long tool life and consistently stable grinding performance when machining silicon carbide.
02
Revolutionary damage layer control technology
By synergistically optimizing the combination of binder and abrasive, we have achieved precision grinding of silicon carbide substrates, minimizing subsurface damage to the lowest possible level.
03
Cost-effective solution
The long service life and high stability of our grinding wheels can significantly reduce the frequency of tool changes and downtime, helping you effectively control the manufacturing costs of silicon carbide substrates.
Abrasive etching pretreatment
Abrasive Coating Pre-treatment
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Silicon carbide ingot
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Crystal ingot orientation and rounding
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Multi-wire cutting
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Coarse grinding
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Fine grinding
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Rough polishing
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Fine polishing/CMP
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Cleaning and Inspection
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Finished polished sheet
Contact Us
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Phone:0571-86129869
Email:xinyanke@dxinyan.com
Address: Building 1, 1st Floor, No. 516 Shunfeng Road, Linping Subdistrict, Linping District, Hangzhou City, Zhejiang Province