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Silicon Carbide Wafer
Let power devices travel light
Silicon carbide wafer (back thinning)
Silicon Carbide Wafer (Back-Thinning)
Let power devices “hit the ground running” with a lighter load.
After silicon carbide devices are manufactured, just like silicon wafers, their back sides need to be thinned to further enhance the devices’ current-carrying capacity and thermal dissipation efficiency, thereby meeting the stringent requirements for power density and reliability in fields such as electric vehicles and new energy.
Why is back-side thinning so challenging?
Extremely high risk of chipping: When silicon carbide wafers are thinned to below 100 μm, they become highly brittle, placing extremely stringent demands on the cutting force and stress control of grinding wheels.
Surface integrity requirements: The thinned surface must be free of macroscopic cracks and deep-level microcracks; otherwise, the long-term reliability of the device will be severely compromised.
Balancing Process Efficiency and Cost: How to enhance processing efficiency while maintaining high yield is the core challenge facing the industrialization of silicon carbide.
Incorporated in Hong Kong with Limited Liability
Hangzhou Xin Yan Ke’s technological advantages
From silicon to silicon carbide, from wafers to substrates, we leverage cutting-edge technology to inject outstanding competitiveness into your thinning processes.
01
Ultra-precise stress management
Our thinning grinding wheels, through optimized design, achieve “gentle” cutting, effectively dispersing mechanical stress during the grinding process and significantly reducing the chipping rate of thinned silicon carbide wafers.
02
Balancing efficiency and quality
We offer wheel solutions that combine rough and fine grinding, enabling rapid stock removal while ensuring a high-quality, damage-free surface finish during the fine grinding stage, thus achieving efficient and high-quality production.
03
Innovative patented technology
A metal-organic framework material (Cu-MOF) has been innovatively introduced into a ceramic binder system. By optimizing the composition ratio and process parameters, the Cu-MOF is uniformly dispersed within the binder, forming a unique nano-scale network structure.
04
Comprehensive solution provider
We have a deep understanding of the properties of silicon carbide materials and can help you select the most suitable wheel grit size, concentration, and bond type, making us your reliable partner in overcoming the challenges of silicon carbide thinning processes.
Microscopic pore structure diagram of a diamond grinding wheel with an MOF binder
Hangzhou Xinyankexi Silicon Carbide Precision Grinding Wheel—Reduces Surface Damage Layer on Silicon Carbide Wafers After Thinning
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Silicon carbide wafer
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Front-end process completed.
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Silicon carbide rough grinding and thinning
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Silicon carbide fine grinding and thinning
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Metallization
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Wafer dicing
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Chip mounting
Polishing liquid
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Wire bonding
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Molded plastic encapsulation
Contact Us
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Phone:0571-86129869
Email:xinyanke@dxinyan.com
Address: Building 1, 1st Floor, No. 516 Shunfeng Road, Linping Subdistrict, Linping District, Hangzhou City, Zhejiang Province